Raman spectroscopy of strained GaP nanowires

Raman spectroscopy of GaP/GaNP core/shell nanowires

Raman spectroscopy of silicon nanowires

We measure the effects of phonon confinement on the Raman spectra of silicon nanowires. We show how previous spectra were inconsistent with phonon confinement, but were due to intense local heating caused by the laser. This is peculiar to nanostructures, and would require orders of magnitude more power in bulk Si. By working at very low laser powers, we identify the contribution of pure confine...

Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy

We have studied the optical phonons of GaAs quantum wells strained to GaP. The phonon frequencies have been measured by Raman spectroscopy. The results have been compared with calculations based on the linear chain model and the random isoamplitude model. The comparison suggests a certain degree of atomic intermixing at the interfaces, mainly due to a limited but measurable arsenic carry-over d...

Raman-scattering study of GaP/InP strained-layer superlattices.

Strained-layer superlattices (SL's) made up of alternate GaP and InP layers constitute a system where the strain is symmetrized when grown on GaAs substrates. While both components present a large lattice mismatch to GaAs ( —3.6% GaP, +3.8% InP) giving rise to large biaxial deformations in the individual layers, the net value of strain in the whole SL is very small, thus favoring their stabilit...

Resonant Raman spectroscopy of individual strained single-wall carbon nanotubes.

Resonance Raman spectra of individual strained ultralong single-wall carbon nanotubes (SWNTs) are studied. Torsional and uniaxial strains are introduced by atomic force microscopy manipulation. Torsional strain strongly affects the Raman spectra, inducing a large downshift in the E2 symmetry mode in the G+ band, but a slight upshift for the rest of the G modes and also an upshift in the radial ...