Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

Some memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true number generators (TRNG) for advanced data encryption. However, there is still no clear guide on how essential manufacturing parameters like materials selection, thicknesses, deposition methods, and device lateral size can influence the quality of RTN signal. In this paper, an exhaustive statistical analysis signals produced by different MIM-like reported, straightforward guidelines fabrication enhanced performance are presented, are: i) Ni Ti electrodes show better than Au electrodes, ii) 50 μm × devices 5 ones, iii) TiO2 shows HfO2 Al2O3, iv) sputtered-oxides ALD-oxides, v) 10 nm thick oxides oxides. The recorded been used as entropy sources in high-throughput TRNG circuits, passed randomness tests National Institute Standards Technology. work serve a useful scientists electronic engineers when fabricating applications.