Reactive Ion Etching Characteristics of Permalloy Thin Films

Reactive Ion Etching of Benzocyclobutene Polymer Films

Reactive ion etching is a widely-used technique for fabricating via holes in polymer-metal multilayer interconnect structures. Reactive ion etching of thin film polymers was studied using Benzocyclobutene polymer and photoresist etch mask, in O2 and SF6 plasma. A design of experiments (DOE) was carried out with rf power, pressure, and SF6 concentration as the design variables, with a constant t...

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Deep Reactive Ion Etching (DRIE)

Wet Etching of Optical Thin Films

Laser-induced magnetization dynamics of lanthanide-doped permalloy thin films.

We investigate the effect of Ho, Dy, Tb, and Gd impurities on the femtosecond laser-induced magnetization dynamics of thin Permalloy films using the time-resolved magneto-optical Kerr effect. Varying the amount of Ho, Dy, Tb content from 0% to 8%, we observe a gradual change of the characteristic demagnetization time constant from approximately 60 to approximately 150 fs. In contrast, Gd concen...