Reactive ion etching for fabrication of biofunctional titanium nanostructures

The fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching.

We show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped...

Cryogenic Deep Reactive Ion Etching of Silicon Micro and Nanostructures

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Fabrication of GaN-based Photonic Crystal Structures by Reactive Ion Etching 87 Fabrication of GaN-based Photonic Crystal Structures by Reactive Ion Etching

The fabrication of the 2D GaN-based photonic crystal structure at optical scales, a subμm scale in our case is very challenging. In our work, a double-etching method proved to be feasible to achieve the periodic GaN/air variation. The pattern was defined in a PMMA resist by electron-beam lithography and transferred to SiO2 by reactive ion etching (RIE) in a CF4 plasma and further into GaN by RI...

Deep Reactive Ion Etching (DRIE)