Reactive Ion Etching of Quartz Substrates Using Three-dimensional Aluminum Masks

Reactive ion etching of quartz and Pyrex for microelectronic applications

The reactive ion etching of quartz and Pyrex substrates was carried out using CF4 /Ar and CF4 /O2 gas mixtures in a combined radio frequency ~rf!/microwave ~mw! plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture ~CF4 /Ar or CF4 /O2), the relative concentration of CF4 in the gas mixture, the rf power ~and the associated self-in...

Reactive ion etching of GaN using WI3

Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Deep Reactive Ion Etching (DRIE)

Deep Reactive Ion Etching of Quartz, Lithium Niobate and Lead Titanate

High speed directional etching of non conventional materials like Quartz, Lithium Niobate and Lead Titanate is still insufficiently developed for producing high aspect ratio microstructures. Compared to deep silicon etching, the plasma etching of these materials has suffered from limitations in achievable depth, aspect ratio, verticality and smoothness of surfaces. Deep etching with nearly vert...