Reactive Ion Etching Process of Micro Mechanical Pendulum

Cryogenic Deep Reactive Ion Etching of Silicon Micro and Nanostructures

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Deep Reactive Ion Etching (DRIE)

Reactive ion etching of GaN using WI3

Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...

Reactive Ion Etching of Benzocyclobutene Polymer Films

Reactive ion etching is a widely-used technique for fabricating via holes in polymer-metal multilayer interconnect structures. Reactive ion etching of thin film polymers was studied using Benzocyclobutene polymer and photoresist etch mask, in O2 and SF6 plasma. A design of experiments (DOE) was carried out with rf power, pressure, and SF6 concentration as the design variables, with a constant t...