Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

نویسندگان

چکیده

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of that capable switching between low resistance high states. These emerging have been widely used in optical storage media memory devices. Over the past recent years, there interests exploiting PCM MIT materials, especially germanium antimony telluride (GST) alloys vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The MIT-based RF devices expected to bridge gap semiconductor switches microelectromechanical system (MEMS) as they combine insertion loss performance MEMS technology small size reliability technology. This article presents an overview circuits discusses advancements reconfigurable millimeter-wave (mmWave) based on depth.

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ژورنال

عنوان ژورنال: IEEE journal of microwaves

سال: 2023

ISSN: ['2692-8388']

DOI: https://doi.org/10.1109/jmw.2023.3247360