Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells

This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were ascribed to two pathways of the exciton recombination, corresponding to the fast decay and the slow ...

Auger Recombination in Semiconductor Quantum Wells

The principal mechanisms of Auger recombination of nonequilibrium carriers in semiconductor heterostructures with quantum wells are investigated. It is shown for the first time that there exist three fundamentally different Auger recombination mechanisms of (i) thresholdless, (ii) quasi-threshold, and (iii) threshold types. The rate of the thresholdless Auger process depends on temperature only...

Recombination Dynamics in GaN and InGaN / GaN Multiple Quantum Wells on Air・bridged Lateral

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal qualit...

Excitonic Radiative Dynamics in Multiple Quantum Wells

The fundamental intrinsic radiative process associated with excitons in semiconductor multiple quantum wells is discussed within the context of exciton polaritons. Multiple quantum wells in which each well is randomly displaced from its ideal periodic position are discussed in order to investigate the effect of disorder on excitonic radiative widths. The coherent transpori of excitons in multip...