Reducing the qualification time of low energy phosphorus ion implantation process using spectroscopic ellipsometry for dynamic random access memory production line

نویسندگان

چکیده

Abstract In this study, a new method has been applied to monitor the low energy phosphorus ion implantation process in dynamic random access memory production line using spectroscopic ellipsometry (SE). The dose sensing ability of SE is similar level that wavelength dispersive x-ray fluorescence (XRF) and almost twice stronger than XRF. coefficients determination have confirmed they are higher 95% both for as variables. case XRF measurement, photoresist (PR) should be removed by ashing strip processes before measuring concentration avoid chamber contamination high vacuum. However, there free issue presence PR, so can monitored immediately after implantation. Consequently, qualification time reduced at least much waiting running processes. It worth note speed 33 times faster Considering advantage fast measurement speed, number points was increased from 5 21 including 8 wafer edge enhance monitoring product quality. work, effectively 39.2% average lines technology.

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ژورنال

عنوان ژورنال: Semiconductor Science and Technology

سال: 2023

ISSN: ['0268-1242', '1361-6641']

DOI: https://doi.org/10.1088/1361-6641/acab27