Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si.

High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-i...

Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon.

We present measurements of relative intensity noise versus various levels of optical feedback for 1.3 μm quantum dot lasers epitaxially grown on silicon for the first time. A systematic comparison is made with heterogeneously integrated 1.55 μm quantum well lasers on silicon. Our results indicate up to 20 dB reduced sensitivity of the quantum dot lasers on silicon compared to the quantum wells.

Modulation Response and Relative Intensity Noise Spectra in Quantum Cascade Lasers

Static properties, relatively intensity noise and intensity modulation response in quantum cascade lasers (QCLs) studied theoretically in this paper. The present rate equations model consists of three equations for the electrons density in the conduction band and one equation for photons density in cavity length. Two equations were derived to calculate the noise and modulation response. Calcula...