Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications

Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and inside the III-N barrier cause an increase in dynamic on-resistance and a shift of threshold voltage, ...

Current Model for short Channel Illuminated Gallium Nitride HEMT

Microwave power transistors play key role in today‟s wireless communication, necessary for virtually all major aspects of human activities from entertainment, business to military. HEMT is widely used due to its high speed and power amplification capabilities. The paper proposes a current Model for short channel HEMT to evaluate its sensitivity to illumination to find its application in optical...

application of upfc based on svpwm for power quality improvement

در سالهای اخیر،اختلالات کیفیت توان مهمترین موضوع می باشد که محققان زیادی را برای پیدا کردن راه حلی برای حل آن علاقه مند ساخته است.امروزه کیفیت توان در سیستم قدرت برای مراکز صنعتی،تجاری وکاربردهای بیمارستانی مسئله مهمی می باشد.مشکل ولتاژمثل شرایط افت ولتاژواضافه جریان ناشی از اتصال کوتاه مدار یا وقوع خطا در سیستم بیشتر مورد توجه می باشد. برای مطالعه افت ولتاژ واضافه جریان،محققان زیادی کار کرده ...

Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices

We present a methodology for the identification of transport parameters for Gallium Nitride (GaN) based semiconductor materials and devices. A Monte Carlo (MC) approach has been employed to investigate the electron transport in GaN and AlGaN, materials that are very important in device applications of high-power, high-frequency electronics. Our model is validated against measured data and compa...

Characterization and Failure Mode Analysis of Cascode GaN HEMT