Reliable Modeling of Ideal Generic Memristors via State-Space Transformation
نویسندگان
چکیده
منابع مشابه
Reliable Modeling of Ideal Generic Memristors via State-Space Transformation
The paper refers to problems of modeling and computer simulation of generic memristors caused by the so-called window functions, namely the stick effect, nonconvergence, and finding fundamentally incorrect solutions. A profoundly different modeling approach is proposed, which is mathematically equivalent to windowbased modeling. However, due to its numerical stability, it definitely smoothes th...
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Ideal memristor is a resistor with a memory, which adds dynamics to its behavior. The most usual characteristics describing this dynamics are the constitutive relation (i.e. the relation between flux and charge), or Parameter-vs-state map (PSM), mostly represented by the memristance-to-charge dependence. One of the so far unheeded tools for memristor description is its differential equation (DE...
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Memristors have pinched hysteresis loops in the V − I plane. Ideal memristors are everywhere non-linear, cross at zero and are rotationally symmetric. In this paper we extend memristor theory to produce different types of non-ideality and find that: including a background current (such as an ionic current) moves the crossing point away from zero; including a degradation resistance (that increas...
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ژورنال
عنوان ژورنال: Radioengineering
سال: 2015
ISSN: 1210-2512
DOI: 10.13164/re.2015.0393