Reversible electron pumping and negative differential resistance in two-step barrier diode under strong terahertz ac field

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Negative Differential Resistance of Electrons in Graphene Barrier

The graphene is a native two-dimensional crystal material consisting of a single sheet of carbon atoms. In this unique one-atom-thick material, the electron transport is ballistic and is described by a quantum relativistic-like Dirac equation rather than by the Schrödinger equation. As a result, a graphene barrier behaves very differently compared to a common semiconductor barrier. We show that...

متن کامل

Two-electron photodetachment of negative ions in a strong laser field.

We study the photodetachment of H-, F-, and Br- in a short laser pulse of 800 nm wavelength and 6 x 10(14) W/cm2 peak intensity. Photoelectron spectra, recorded with the use of an imaging technique, reveal a substantial contribution from the sequential process of double detachment of halogen negative ions. The saturation effect is shown to play a crucial role in this process. The role of the al...

متن کامل

Zero-differential resistance state of two-dimensional electron systems in strong magnetic fields.

We report the observation of a zero-differential resistance state (ZDRS) in response to a direct current above a threshold value I>I th applied to a two-dimensional system of electrons at low temperatures in a strong magnetic field. Entry into the ZDRS, which is not observable above several Kelvins, is accompanied by a sharp dip in the differential resistance. Additional analysis reveals an ins...

متن کامل

A novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

متن کامل

A novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2011

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.3562309