Review of solution growth techniques for 4H-SiC single crystal

SiC Bulk Single Crystal Growth

SiC single crystal is usually grown by sublimation (modified Lely method). There is a lotof remaining issues that should be solved. One is the technical problems of SiC single crystal growth process. And the other is the theoretical problem based on SiC physical properties. As the example of technical issues, in this paper, the example of design optimization for SiC sublimation growth is descri...

CVD growth of 3C-SiC on 4H-SiC substrate

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...

4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Jun Hu Xiaobin Xin, Petre Alexandrov, Jian H. Zhao, Brenda VanMil, D. Kurt Gaskill, Kok-Keong Lew, Rachael Myers-Ward, and Charles Eddy, Jr., 3) 1) SiCLAB, ECE Dept., Rutgers University, 94 Brett Road, Piscataway, NJ 08854, USA, [email protected] 2) United Silicon Carbide, Inc., 100 Jersey Ave., BLDG A, New Brunswick, NJ 08901, USA 3) Naval Research Laboratory, Code 6882, 4555 Overlook Ave ...

Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates

Detection of Polymer Brushes developed via Single Crystal Growth

Single crystals consisting various surface morphologies and epitaxial structures were applied to investigate the effect of other phase regions in the vicinity of a given tethered chains-covered area having a certain molecular weight of amorphous brushes. The designed experiments demonstrated that regardless of the type of surface morphology (patterned and especial mixed-brushes, homo and co...