RF-MEMS switches with AlN dielectric and their applications
نویسندگان
چکیده
منابع مشابه
Dual-Beam Actuation of Piezoelectric AlN RF MEMS Switches Monolithically Integrated with AlN Contour-Mode Resonators
This work reports on piezoelectric Aluminum Nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires low actuation voltage (5 to 20 V), facilitates active pull-off to open the switch and exhibits f...
متن کاملDual Beam Actuation of Piezoelectric AlN RF MEMS Switches Integrated with AlN Contour-mode Resonators
This work reports on piezoelectric Aluminum Nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires low actuation voltage (5-20 V), facilitates active pull-off to open the switch and fast switchin...
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RF Micro-Electro-Mechanical (MEM) switches have numerous potential applications from mode switching in cell phones at 1-2 GHz to phased array antennas for space-based radar applications. However, environmental factors such as temperature, humidity, and foreign contaminants play a significant role in switch reliability and lifetime. The effects of these environmental factors must be mitigated to...
متن کاملCompact Model of Dielectric Charging in RF MEMS Capacitive Switches
RF MEMS capacitive switches show great potential for use in wireless communication device. However, their widespread insertion in commercial products requires further improvements in their longterm reliability. Dielectric charging is one of the factors that impact switch reliability. Dielectric charging is understood to mean the accumulation of electric charge in the insulating dielectric layer...
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ژورنال
عنوان ژورنال: International Journal of Microwave and Wireless Technologies
سال: 2011
ISSN: 1759-0787,1759-0795
DOI: 10.1017/s175907871100064x