Robust mode space approach for atomistic modeling of realistically large nanowire transistors
نویسندگان
چکیده
منابع مشابه
Atomistic Simulation of Nanowire Transistors
At the nanometer scale, the computer simulation of electronic transport cannot be conceived without including quantum-mechanical effects as well as the atomic granularity of the simulation domain. In this review we present a three-dimensional quantum transport simulator based on the sp3d5s∗ semi-empirical tight-binding (TB) method that fulfills these two requirements. The integration of the mul...
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The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic structure, and the top-of-the-barrier semiclassical ballistic model for calculation of the transport properties of the transistors. The dispersion is self consistently computed with a 2D Poisson solution for the electr...
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In this paper, using the neural space mapping (NSM) concept, we present a SPICE-compatible modeling technique to modify the conventional MOSFET equations, to be suitable for ballistic carbon nanotube transistors (CNTTs). We used the NSM concept in order to correct conventional MOSFET equations so that they could be used for carbon nanotube transistors. To demonstrate the accuracy of our mod...
متن کاملElectrostatics of nanowire transistors
S The electrostatics of nanowire transistors are studied by solving the Poisson equation self-consistently with the equilibrium carrier statistics of the nanowire. For a one-dimensional, intrinsic nanowire channel, charge transfer from the metal contacts is important. We examine how the charge transfer depends on the insulator and the metal/semiconductor Schottky barrier height. We also show th...
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An atomistic full-band quantum transport simulator has been developed to study threedimensional Si nanowire field-effect transistors (FETs) in the presence of electron-phonon scattering. The Non-equilibrium Green’s Function (NEGF) formalism is solved in a nearest-neighbor sp3d5s∗ tight-binding basis. The scattering self-energies are derived in the self-consistent Born approximation to inelastic...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2018
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.5010238