Saturation intensity and time response of InGaAs-InGaP MQW optical modulators

Saturation Intensity and Time Response of InGaAs-InGaP MQW Optical Modulators

We report modulation saturation and time response measurements on InCaAs-InGaP MQW modulators. The measurements yield a saturation intensity of (3.7 + 0.1) kWlcm' for a 0-10 V swing and switching times between 10 and 90 ns, depending on the bias voltage and incident light intensity. The observed dependence indicates that field screening due to carrier build-up is the dominant physical mechanism...

Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.

Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irrad...

Optimization of InGaAs/InGaAsP MQW mqw semiconductor amplifiers

High-efficiency Mqw Electroabsorption Modulators

Multi-quantum well (MQW) electroabsorption modulators (EAMs) are attractive for applications requiring signal modulation at high speed and with high e±ciency (high extinction ratio at low voltage). They are promising devices for external signal modulation in high-bandwidth optical communication systems. EAMs can be integrated with other devices like laser diodes, semiconductor optical ampli ̄ers...

InGaAs-AlAs and InGaAs-InGaP Strain-Compensated Heterostructures for Short-Wavelength Intersubband Transitions and Lasers