Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2016
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2016.2545861