Semiconductors: Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector (Adv. Electron. Mater. 2/2018)

Tunneling spectroscopic analysis of optically active wide band . . gap semiconductors

Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...

Cathodoluminescence Studies of Electron Injection Effects in Wide-Band-Gap Semiconductors

Wide Band Gap Semiconductor Devices for Power Electronics

It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative chang...

Solar-blind UV detectors based on wide band gap semiconductors

Solid-state photon detectors based on semiconductors other than silicon are not yet considered mature technology but their current development opens new possibilities, also for space observations. Such devices are especially attractive for ultraviolet radiation detection, as semiconductor materials with band gaps larger than that of silicon can be produced and used as “visible-blind” or “solar-...

Defects, Impurities and Doping Levels in Wide-Band-Gap Semiconductors

A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities....