Si-CMOS-compatible 2D PtSe2-based self-driven photodetector with ultrahigh responsivity and specific detectivity

Photodetectors (PDs) based on two-dimensional (2D) materials are attracting considerable research interest due to the unique properties of 2D and their tunable spectral response. However, performance is not outstanding enough, compatibility fabrication process with Si-complementary metal oxide semiconductor (CMOS) flow needs evaluation. Here, we report an unprecedented high-performance, air-stable, self-driven, broadband room-temperature PD architecture PtSe2/ultrathin SiO2/Si heterojunction. The exhibits a very prominent responsivity 8.06 A W−1, truly high specific detectivity 4.78 × 1013 cm Hz1/2 extremely low dark current 0.12 pA, fantastic photocurrent/dark ratio 1.29 109 at zero bias. measured photocurrent responsivities wavelengths 375, 532, 1342, 1550 nm 2.12, 5.56, 18.12, 0.65 mA respectively. Moreover, fabricated 9 device array only illustrates uniformity reproducibility PDs but also shows great potential in field ultraviolet-visiblenear infrared illumination imaging applications fully compatible Si-CMOS technologies. Our design heterojunction greatly suppresses current, improves diode ideality factor, increases barrier. Accordingly, it paves way for general strategy enhance used novel optoelectronic applications.