Si ion-induced instability in flatband Voltage of Si/sup +/-implanted gate oxides
نویسندگان
چکیده
منابع مشابه
Nonvolatile Memory Based on Si Implanted Gate Oxides
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2006
ISSN: 0018-9383
DOI: 10.1109/ted.2006.871841