SILICON NANOWIRES FABRICATION BY PHYSICAL METHOD
نویسندگان
چکیده
منابع مشابه
Fabrication of silicon nanowires
Pentagon-shaped silicon wires with linewidth around 300 nm are successfully fabricated by using the Si/SiGe epitaxy technique, reactive ion etching, and subsequent selective chemical etching. The nanowires are oxidized in wet O2 at 750 ◦C and 850 ◦C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowir...
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ژورنال
عنوان ژورنال: Vietnam Journal of Science and Technology
سال: 2018
ISSN: 2525-2518,2525-2518
DOI: 10.15625/2525-2518/54/5a/12074