Smoothing of interfaces in ultrathin Mo/Si multilayers by ion bombardment
نویسندگان
چکیده
منابع مشابه
Nanoscale self - affine surface smoothing by ion bombardment
Topography of silicon surfaces irradiated by a 2 MeV Si + ion beam at normal incidence and ion fluences in the range 10 15 − 10 16 ions/cm 2 has been investigated using scanning tunneling microscopy. At length scales below ∼ 50 nm, surface smoothing is observed; the smoothing is more prominent at smaller length scales. The smoothed surface is self-affine with a scaling exponent α = 0.53 ± 0.02....
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 1993
ISSN: 0040-6090
DOI: 10.1016/0040-6090(93)90586-e