Solution-Based Synthesis of GeTe Octahedra at Low Temperature

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Solution-based synthesis of GeTe octahedra at low temperature.

GeTe octahedra were prepared by reaction of equimolar amounts of GeCl2·dioxane and Te(SiEt3)2 in oleylamine, whereas a slight excess of the Te precursor yielded GeTe octahedra decorated with elemental Te nanowires, which can be removed by washing with TOP. The mechanism of the GeTe formation is strongly influenced by the solvent. The expected elimination of Et3SiCl (dehalosilylation) only occur...

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ژورنال

عنوان ژورنال: Inorganic Chemistry

سال: 2013

ISSN: 0020-1669,1520-510X

DOI: 10.1021/ic402266j