SPECTRA OF ATTENUATED TOTAL REFLECTION OF NITRIDED SiO2/Si STRUCTURES

We studied the behavior of nitrogen in silicon dioxide films on single-crystal substrates by attenuated total reflection (ATR) method and time-of-flight secondary ion mass spectrometry. Nitrogen was introduced into a dielectric formed pyrogenic oxidation at temperature 850 ºС an atmosphere wet oxygen implantation N+ ions with energy 40 keV doses 2.5‧1014 1.0‧1015 cm–2,
 followed rapid thermal annealing 1000 or 1050 duration 15 s air. Nitridization some samples carried out during addition small amount 1200 for 120 minutes. It is established that heat treatments, majority atoms diffuse to SiО2/Si interface accumulate near-boundary region oxide. The ATR spectra show absorption band maxima ~2320 2360 cm–1, which probably due vibrations double cumulative bonds O=Si=N− type. formation these interaction dangling silicon-dielectric interface, as result uncompensated strained are replaced more stable ones. resulting stronger chemical prevent charge accumulation surface interface.