Stacking-order dependent transport properties of trilayer graphene

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Stacking-dependent band gap and quantum transport in trilayer graphene

Graphene1–3 is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties4,5. In multilayer graphene6,7, stacking order provides an important yet rarely explored degree of freedom for tuning its electronic properties8. For instance, Bernal-stacked trilayer graphene (B-TLG) is semi-metallic with a tunable band overlap, a...

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Molecular adsorption induces the transformation of rhombohedral- to Bernal-stacking order in trilayer graphene.

The Bernal (ABA)-stacked graphene trilayer is presumed to be thermodynamically more stable than the rhombohedral (ABC) counterpart. However, the thermal transformation from ABC to ABA domains does not occur at a temperature lower than 1,000 °C. Here we report that ABC-stacked trilayers are transformed to ABA-stacked layers after an organic molecule triazine is evaporated onto graphene surfaces ...

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Stacking dependent electronic structure and transport in bilayer graphene nanoribbons

The stacking-dependent electronic structure and transport properties of bilayer graphene nanoribbons suspended between gold electrodes are investigated using density functional theory coupled with non-equilibrium Green’s functional method. We find substantially enhanced electron transmission as well as tunneling currents in the AA stacking of bilayer nanoribbons compared to either single-layer ...

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Stacking boundaries and transport in bilayer graphene.

Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few millielectronvolts. This behavior has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties with a minimal conductivity of the order of 2e(2)/h. Here, we propo...

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ژورنال

عنوان ژورنال: Physical Review B

سال: 2011

ISSN: 1098-0121,1550-235X

DOI: 10.1103/physrevb.84.161408