Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature
نویسندگان
چکیده
منابع مشابه
Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack
The electrical behavior of decananometer MOS transistors with high-κ dielectric gate stack has been investigated using 2D numerical simulation. Two important electrostatic limitations of high-κ materials have been analyzed and discussed in this work: i) the gate-fringing field effects which compromise short-channel performance when simultaneously increasing the dielectric constant and its physi...
متن کاملElectrical gate control of spin current in van der Waals heterostructures at room temperature
Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS2). Here we combine graphene and MoS2 in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. By per...
متن کاملRoom temperature high-fidelity holonomic single-qubit gate on a solid-state spin
At its most fundamental level, circuit-based quantum computation relies on the application of controlled phase shift operations on quantum registers. While these operations are generally compromised by noise and imperfections, quantum gates based on geometric phase shifts can provide intrinsically fault-tolerant quantum computing. Here we demonstrate the high-fidelity realization of a recently ...
متن کاملA review of gate tunneling current in MOS devices
Gate current in metal–oxide–semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy barrier, is studied in this paper. The physical mechanisms of tunneling in an MOS structure are reviewed, along with the particularities of tunneling in modern MOS transistors, including effects such as direct tunneling, polysilicon depletion, hole tunneling and valence b...
متن کاملTunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics
For the first time, we demonstrate experimentally that by using HfLaO high-κ gate dielectric, the flat-band voltage (Vfb) and the threshold voltage (Vth) of metal-electrode-gated MOS devices can be tuned effectively in a wide range (wider than that from the Si-conduction band edge to the Si-valence band edge) after a 1000-◦C annealing required by a conventional CMOS source/drain activation proc...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2021
ISSN: 2168-6734
DOI: 10.1109/jeds.2021.3082201