Strain in epitaxial CoSi2films on Si (111) and inference for pseudomorphic growth
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چکیده
منابع مشابه
Epitaxial growth mechanisms and structure of CaF2/Si(111).
The early stages of interface formation between CaF2 and Si(111)have been studied, in situ, by a combination of reflection high-energy electron diffraction, x-ray diffraction, and core-level photoemission. The results are combined with ex situ transmission-electron-microscopy measurements to show that the initial growth mode changes from Volmer-Weber to Stranski-Krastanow, depending on the subs...
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We report results on the incorporation of Bi ~n type! and Tl ~p-type! impurity in PbSe and PbEuSe grown on CaF2 /Si~111! by molecular beam epitaxy. Bi2Se3 and Tl2Se were used as sources of dopants in the growth. Electron concentrations in the low 10 cm range and hole concentrations in the middle 10 cm range have been realized in the PbSe and PbEuSe layers with Eu content up to 3%. Electron and ...
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The structure and morphology of ultrathin lattice matched CaF2 films of very few monolayers thickness, which were deposited on Si 111 substrates by molecular-beam epitaxy, have been studied in situ by synchrotron based grazing incidence x-ray diffraction. Even for the thinnest investigated film of three monolayers thickness, the in-plane structure of the CaF2 film is determined by a lateral sep...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1989
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.102327