Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...

OPTICAL AND ELECTRICAL PROPERTIES OF CdxZn8-xTe92CHALCOGENIDE THIN FILMS DEPOSITED BY THERMAL EVAPORATION AT LOW TEMPERATURE

CdxZn8-xTe92chalcogenideglass is prepared by melt quenching technique. The thin films of as-prepared glass are deposited by thermal evaporation technique under the vacuum better than 10torr. The optical parameters such as refractive index (n), extinction coefficient (k), the absorption coefficient (α), and optical band gap (Eg) are calculated from transmittance spectra in the 200-1800nm region....

Electrical Properties of Plasma Deposited Thin Films

Abstract. It is well known that MIM (metal-insulator-metal) structures exhibit various high-field processes, which may be either electrode-limited (e.g. tunneling, Schottky-barrier emission) or bulk-limited (e.g. space-charge-limited conduction, Poole-Frenkel conduction). Thin films prepared using PECVD (plasma-enhanced chemical vapour deposition)exhibited Pool-Frenkel conductivity (Schottky co...

Author's personal copy Properties of atomic layer deposited HfO2 thin films

Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition

High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was co...