Study of Charge Carrier Transport in GaN Sensors
نویسندگان
چکیده
منابع مشابه
Study of Charge Carrier Transport in GaN Sensors
Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of ...
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ژورنال
عنوان ژورنال: Materials
سال: 2016
ISSN: 1996-1944
DOI: 10.3390/ma9040293