Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf 0.5 Zr 0.5 O 2 (Adv. Funct. Mater. 43/2021)

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/ decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challeng...

The effect of aspirin on the interaction of histone 05 and 05-DNA

The linker histones (H1 or H5) which play a key role in the folding of chromatin, are general repressors of gene expression. Nuclei of the mature chicken erythrocytes (and in some mammalian cells) contain both of them. Although the interaction of H5 with DNA is stronger than that of H1, it does not prevent the transcription of some erythroid-specific genes. It has been shown that some modificat...

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...

Solution Processable Nanowire Field-Effect Transistors

Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~10 and hole mobilities of ~13 cm/Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be us...

Materials and Wireless Microfluidic Systems for Electronics Capable of Chemical Dissolution on Demand (Adv. Funct. Mater. 92015)