Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf 0.5 Zr 0.5 O 2 (Adv. Funct. Mater. 43/2021)
نویسندگان
چکیده
Negative Capacitance In article number 2103748, Sunkook Kim and co-workers effectively utilize combustion chemistry in solution-processed ferroelectric-Hf0.5Zr0.5O2 to realize negative capacitance the same achieve ultra-low-power operation of MoS2 transistors via sub-60 mV/dec switching. This is first study extending applicability oxide ferroelectrics a completely new avenue high mobility, electronics.
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2021
ISSN: ['1616-301X', '1616-3028']
DOI: https://doi.org/10.1002/adfm.202170316