Surface Debye temperature measurement with reflection high‐energy electron diffraction

Surface Debye Temperature Measurement with Reflection High-Energy Electron Diffraction

This Article is brought to you for free and open access by the Electrical & Computer Engineering at ODU Digital Commons. It has been accepted for inclusion in Electrical & Computer Engineering Faculty Publications by an authorized administrator of ODU Digital Commons. For more information, please contact [email protected]. Repository Citation Elsayed-Ali, H. E., "Surface Debye Temperature ...

Coherent diffraction surface imaging in reflection geometry.

We present a reflection based coherent diffraction imaging method which can be used to reconstruct a non periodic surface image from a diffraction amplitude measured in reflection geometry. Using a He-Ne laser, we demonstrated that a surface image can be reconstructed solely from the reflected intensity from a surface without relying on any prior knowledge of the sample object or the object sup...

Highly sensitive reflection high-energy electron diffraction measurement by use of micro-channel imaging plate

Micro-channel plate ~MCP! was used to intensify the image on the fluorescent screen in reflection high-energy electron diffraction. The primary electron current could be reduced by four orders of magnitude to get the image of the same intensity as in the measurement without MCP. The reduction of electron beam enabled observation of ionic crystal surfaces without causing electrolysis and chargin...

Effective surface Debye temperature for NiMnSb.100. epitaxial films

Wurtzite GaN Surface Structures Studied by Scanning Tunneling Microscopy and Reflection High Energy Electron Diffraction

We report studies of the surface reconstructions for both the Ga-face and the N-face of wurtzite GaN films grown using molecular beam epitaxy. Nface reconstructions are primarily adatom-on-adlayer structures which can be formed by room temperature sub-monolayer Ga deposition. These structures undergo reversible order-disorder phase transitions to 1×1 in the temperature range of 200–300 C. Ga-fa...