Surface passivation of phosphorus-diffused emitters by inline thermal oxidation

Surface passivation of black silicon phosphorus emitters

ii Abstract (in Finnish) iiiin Finnish) iii

Limitation of industrial phosphorus-diffused emitters by SRH recombination

It is commonly assumed in the PV community that Auger recombination is the dominant loss mechanism in heavily phosphorusdoped emitters of industrial Si solar cells. Contrary to this assumption, we show in this work that most of the losses are caused by Shockley-Read-Hall (SRH) recombination via defect states introduced by inactive phosphorus. Using numerical device simulations, we successfully ...

Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

‏‎suppression of coke formation in thermal cracking by coke inhibitors‎‏

‏‎the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...

Reliable passivation of black phosphorus by thin hybrid coating.

Black phosphorus (BP) possesses several extraordinary physical properties, which include in-plane anisotropy, thickness dependent direct bandgap and high carrier mobility. These physical properties make BP highly desirable from the point of view of fundamental science and modern optoelectronics applications. The excitement about this material has always been accompanied by unreserved skepticism...