Surface Structure of Fe on GaAs.
نویسندگان
چکیده
منابع مشابه
the structure of lie derivations on c*-algebras
نشان می دهیم که هر اشتقاق لی روی یک c^*-جبر به شکل استاندارد است، یعنی می تواند به طور یکتا به مجموع یک اشتقاق لی و یک اثر مرکز مقدار تجزیه شود. کلمات کلیدی: اشتقاق، اشتقاق لی، c^*-جبر.
15 صفحه اولInfluence of substrate surface reconstruction on the growth and magnetic properties of Fe on GaAs„001..
We have studied the magnetic and structural properties of epitaxial bcc Fe~001! films grown at 175 °C on molecular-beam epitaxy-prepared GaAs~001!-234 and -c(434) reconstructed surfaces, with film thicknesses ranging up to ;30 ML ~;43 Å!. We present measurements of the thickness-dependent evolution of the magnetic properties of the Fe films as determined by in situ magneto-optic Kerr effect. We...
متن کاملthe effects of changing roughness on the flow structure in the bends
flow in natural river bends is a complex and turbulent phenomenon which affects the scour and sedimentations and causes an irregular bed topography on the bed. for the reason, the flow hydralics and the parameters which affect the flow to be studied and understand. in this study the effect of bed and wall roughness using the software fluent discussed in a sharp 90-degree flume bend with 40.3cm ...
Large scale surface structure formed during GaAs (001) homoepitaxy
Atomic force microscopy studies have been performed on GaAs (001) homoepitaxy Rlrns grown by molecular beam epitaxy. Multilayered features are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased these features grow in all dimensions but the angle of inclination remains approximately constant at 1”. The mounding does not occur on surfaces gro...
متن کاملNew structure model for the GaAs(001)-c(4x4) surface.
The surface structure of the As-stabilized GaAs(001)-c(4 x 4) surface has been studied. We show that the seemingly established three As-dimer model is incompatible with experimental data and propose here a new structure model which has three Ga-As dimers per c(4 x 4) unit cell. This mixed dimer model, confirmed by the rocking-curve analysis of reflection high-energy electron diffraction and fir...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Magnetics Society of Japan
سال: 1995
ISSN: 0285-0192
DOI: 10.3379/jmsjmag.19.730