Switching charge-transfer characteristics from p-type to n-type through molecular “doping” (co-crystallization)
نویسندگان
چکیده
منابع مشابه
Doping dependent charge transfer gap and realistic electronic model of n-type cuprate superconductors
T. Xiang, H. G. Luo, D. H. Lu, K. M. Shen, Z. X. Shen Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, China Institute of Theoretical Physics, Chinese Academy of Sciences, P.O. Box 2735, Beijing 100080, China Department of Physics, Applied Physics, and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305, USA and Department o...
متن کاملHeavily p-Type Doped ZnSe Using Te and N Co Doping
A lot of progress has been made on the fabrication of solid-state light emitters; however, there is a spectral gap in the green-yellow region (530–590 nm) with all commercially available devices. This spectral region is important for many emerging applications, such as the use of plastic-optical fibers, that require green lasers to achieve the lowest attenuation coefficient. Thus, ZnSe-based de...
متن کاملGeneralized Weighted Composition Operators From Logarithmic Bloch Type Spaces to $ n $'th Weighted Type Spaces
Let $ mathcal{H}(mathbb{D}) $ denote the space of analytic functions on the open unit disc $mathbb{D}$. For a weight $mu$ and a nonnegative integer $n$, the $n$'th weighted type space $ mathcal{W}_mu ^{(n)} $ is the space of all $fin mathcal{H}(mathbb{D}) $ such that $sup_{zin mathbb{D}}mu(z)left|f^{(n)}(z)right|begin{align*}left|f right|_{mathcal{W}_...
متن کاملELECTRONIC STATES AND TRANSPORT PROPERTIES OF AN n-TYPE -FUNCTION DOPING LAYER IN p-TYPE Si
An extremely sharp and well-defined sheet of Sb-dopant atoms can be embedded in Si with high p-type background during MBE growth. We have measured the transport parallel and perpendicular to the doping layer. The electronic 1 eve1 s of 2-dimensional subbands have been detected.
متن کاملEnhancement of p-type doping of ZnSe using a modified „N¿Te...d -doping technique
Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (NA2ND) increased to 1.5310 18 cm using single d doping of N and Te ~N1Te!, while it was limited to 8310 cm by d doping of N alone. A promising approach was developed in which three consecutive d-doped ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Chemical Science
سال: 2016
ISSN: 2041-6520,2041-6539
DOI: 10.1039/c5sc04954g