Synthesis of SiC ultrafine particles by thermal CVD method.
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چکیده
منابع مشابه
Thermal Plasma Synthesis of Ultrafine Iron Particles
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For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such a man...
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ژورنال
عنوان ژورنال: KAGAKU KOGAKU RONBUNSHU
سال: 1989
ISSN: 0386-216X,1349-9203
DOI: 10.1252/kakoronbunshu.15.91