Technology for NbN HEB based multipixel matrix of THz range
نویسندگان
چکیده
منابع مشابه
Negative Resistance Effects in NbN HEB Devices
It is well known that HEB devices, whether phonon-cooled or diffusioncooled, exhibit unstable regions of their IV-characteristics. These phenomena occur when the device is not pumped by the LO, or when the LO power is decreased sufficiently compared with the power level required for optimum operation. The bias voltage is between the critical value at which the device stops being superconducting...
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The terahertz (THz) range is very attractive for astronomical observations. Spectroscopy and photometry of remote space objects in the THz range allows for a study of their chemical composition, because this range covers rotational lines from simple molecules and electron transition lines from atoms and ions. Heterodyne receivers, due to their high spectral resolution, in the THz range allows f...
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In this paper, we present results on the noise performance of the waveguide Niobium Titanium Nitride (NbTiN) superconducting hot electron bolometer (HEB) mixers, cryogenically cooled by a 4-K close-cycled refrigerator. The NbTiN superconducting HEB mixer is fabricated on a crystalline quartz substrate, and is mounted in a waveguide mixer block for RF and LO coupling. At 0.81 THz, the uncorrecte...
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We present results of experimental study of the gain bandwidth (GBW) of MgB2 hot electron-bolometer (HEB) mixers at 0.1THz and 0.4THz. Antenna integrated 0.25-1.5um2 area devices were made from thin MgB2 films deposited with a custom made HPCVD system. Film as thin as 15-45nm had a Tc from 35K to 40K. The GBW was found to be independent on the bias conditions, the bath temperature, and the LO f...
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ژورنال
عنوان ژورنال: EPJ Web of Conferences
سال: 2018
ISSN: 2100-014X
DOI: 10.1051/epjconf/201819505011