TEM Characterization of GaSb Growth on GaAs (001) Substrate: Growth Mode and Defect Evaluation
نویسندگان
چکیده
منابع مشابه
Growth mode evolution during homoepitaxy of GaAs (001)
Thin film deposition has become a critical technology for the advancement of modern electronics. A large number of artificial heterostructures have been produced by using various growth techniques. Molecular beam epitaxy (MBE) is particularly important because it affords monoatomic layer thickness control over films growing from the vapor phase at relatively low temperatures under supersaturati...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2010
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927610053663