Temperature sensitivity analysis of dual material stack gate oxide source dielectric pocket TFET

The variation of the temperature-dependent performance an electronic device is one major concerns in predicting actual electrical characteristics as bandgap semiconducting material varies with temperature. Therefore, this article, we investigate impact temperature variations ranging from 300 to 450K on DC, analog/ radio frequency, and linearity dual stack gate oxide-source dielectric pocket-tunnel-field-effect transistor (DMSGO-SDP-TFET). In regard, a technology computer-aided design simulator used analyze analog/radio-frequency parameters, such carrier concentration, energy band variation, band-to-band tunneling rate, $$I_\mathrm{DS}-V_\mathrm{GS}$$ characteristics, transconductance ( $$g_{m}$$ ), cut off frequency $$f_{T}$$ gain-bandwidth product, maximum oscillating $$f_{\max }$$ transit time $$\tau $$ ) considering variations. Furthermore, third-order $$g_{m3}$$ voltage intercept point (VIP3), input-interception (IIP3), intermodulation distortion (IMD3) are also analyzed these parameters significant for linear applications. Moreover, proposed DMSGO-SDP-TFET compared conventional dual-material oxide-tunnel-field-effect (DMSGO-TFET). From comparative analysis, terms percentage per kelvin, demonstrates lesser sensitivity towards variation. Hence, suitable candidate low-power switching, biosensing applications at elevated temperatures DMSGO-TFETs.