Temperature studies of Urbach absorption edge in implanted Cu6PS5Br crystals

Temperature-dependent Urbach tail measurements of lutetium aluminum garnet single crystals

Citation Letz, M. et al. " Temperature-dependent Urbach tail measurements of lutetium aluminum garnet single crystals. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matte...

Optical absorption studies of ion implanted and amorphous silicon

A detailed study of the implantation induced damage in Si on sapphire, carried out by optical absorption measurements extending from energies above the band gap down to energies far into the sub gap region of Si, is presented. The changes induced in the optical band gap, band edge slopes and in the sub gap features of the spectra are carefully described. The various stages of formation and quen...

Edge Crack Studies in Rotating FGM Disks

This article focused on the stress analysis of an edge crack in a thin hallow rotating functionally graded material (FGM) disk. The disk is assumed to be isotropic with exponentially varying elastic modulus in the radial direction. A comprehensive study is carried out for various combinations of the crack length and orientation with the different gradation of materials. The effect of non-unifor...

Optical Absorption and Reflection Studies of Tl4InGa3S8 Layered Single Crystals

The optical properties of Tl4InGa3S8 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength region between 400 and 1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.40 and 2.61 eV, respectively. Transmission measurements carried ...

Hydrogen- and helium-implanted silicon: Low-temperature positron-lifetime studies.