Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
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چکیده
منابع مشابه
Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
Aluminum nitride (AlN) hollow nanofibers were synthesized via plasma-enhanced atomic layer deposition using sacrificial electrospun polymeric nanofiber templates having different average fiber diameters (~70, ~330, and ~740 nm). Depositions were carried out at 200°C using trimethylaluminum and ammonia precursors. AlN-coated nanofibers were calcined subsequently at 500°C for 2 h to remove the sa...
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Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, tr...
متن کاملIntroduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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Dye-sensitized solar cells (DSSCs) utilize high surface area metal oxide sintered particle networks to absorb molecular dyes and transport injected charge carriers. While this sintered particle architecture allows liquid electrolyte DSSCs to achieve efficiencies up to 11%, slow charge transport through the semiconductor network limits the amount of modification that can be made to the electroly...
متن کاملPlasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
Please cite the original version: Perros, Alexander & Bosund, Markus & Sajavaara, Timo & Laitinen, Mikko & Sainiemi, Lauri & Huhtio, Teppo & Lipsanen, Harri. 2012. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 30, Issu...
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ژورنال
عنوان ژورنال: Journal of the American Ceramic Society
سال: 2012
ISSN: 0002-7820
DOI: 10.1111/jace.12030