Terahertz response of field-effect transistors in saturation regime

Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors

Helicity sensitive terahertz radiation detection by field effect transistors

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Graphene field-effect transistors as room-temperature terahertz detectors.

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very pro...

Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

Strained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dime...

Terahertz response of carbon nanotube transistors.

We present an approach for time-dependent quantum transport based on a self-consistent nonequilibrium Green function formalism. The technique is applied to a ballistic carbon nanotube transistor in the presence of a time-harmonic signal at the gate. In the on state, the dynamic conductance exhibits plasmonic resonant peaks at terahertz frequencies. These vanish in the off state, and the dynamic...