The electrons drift velocity overshot in inverted transistor heterostructures with donor-acceptor doping and additional digital potential barriers

The first results of the electrons drift velocity study in inverted AlGaAs/InGaAs/GaAs pseudomorphic heterostructures with donor-acceptor doping and short-period AlAs/GaAs superlattices are presented. It is theoretically shown that introduction significantly, up to one a half times, increases overshot when they enter region strong field. Localized states superlattice between quantum well substrate have been found. this effect leads an additional increase theoretical limit for model used, i. e., bulk material well. Keywords: heterostructure, digital barriers, field-effect transistor, gain.