Theoretical analysis of injection driven thermal light emitters based on graphene encapsulated by hexagonal boron nitride

Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride.

Flexible graphene field-effect transistors (GFETs) are fabricated with graphene channels fully encapsulated in hexagonal boron nitride (hBN) implementing a self-aligned fabrication scheme. Flexible GFETs fabricated with channel lengths of 2 μm demonstrate exceptional room-temperature carrier mobility (μFE = 10 000 cm(2) V(-1) s(-1)), strong current saturation characteristics (peak output resist...

TOPICAL REVIEW Graphene on Hexagonal Boron Nitride

The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabricat...

Thermal conductance of graphene/hexagonal boron nitride heterostructures

The lattice-based scattering boundary method is applied to compute the phonon mode-resolved transmission coefficients and thermal conductances of in-plane heterostructures built from graphene and hexagonal boron nitride (hBN). The thermal conductance of all structures is dominated by acoustic phonon modes near the Brillouin zone center that have high group velocity, population, and transmission...

Thermal transport across graphene and single layer hexagonal boron nitride

Epitaxial growth of single-domain graphene on hexagonal boron nitride.

Hexagonal boron nitride (h-BN) has recently emerged as an excellent substrate for graphene nanodevices, owing to its atomically flat surface and its potential to engineer graphene's electronic structure. Thus far, graphene/h-BN heterostructures have been obtained only through a transfer process, which introduces structural uncertainties due to the random stacking between graphene and h-BN subst...