Thermoelastic analysis of semiconducting solid sphere based on modified Moore-Gibson-Thompson heat conduction with Hall Effect

Abstract The main contribution of this study is to present a unique new mathematical model photo-thermoelastic interactions with Hall current effect in an infinite semiconducting solid sphere due high magnetic field acting along its axis. A variable heat flux applied the boundary surface semiconductor sphere. generalized modified Moore-Gibson-Thompson-Photo-Thermal (MGTPT) theory used express governing equations. In Green Nagdhi (GN III) model, thermal relaxation parameter and carrier density introduced obtain Moore-Gibson-Thompson equation (MGT). This solved using Laplace's transforms. Various components displacement, thermodynamic temperature, conductive axial stress as well couple are obtained transformed domain. To get solution physical domain, numerical inversion techniques have been employed. various thermoelasticity theories shown graphically on quantities.