Three-valued magnetic tunnel junction for nonvolatile ternary content addressable memory application
نویسندگان
چکیده
منابع مشابه
Straintronic magneto-tunneling-junction based ternary content addressable memory
memory S. Dey Manasi, M. M. Al Rashid, J. Atulasimha, S. Bandyopadhyay, and A. R. Trivedi Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 USA Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University USA, Richmond, VA 23284, USA Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University USA,...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2008
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3054174