Threshold voltage model for hetero-gate-dielectric tunneling field effect transistors
نویسندگان
چکیده
منابع مشابه
Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
Linearity characteristics of hetero-gatedielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (gm) and current drivability than SiO2-only...
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ژورنال
عنوان ژورنال: International Journal of Electrical and Computer Engineering (IJECE)
سال: 2020
ISSN: 2088-8708,2088-8708
DOI: 10.11591/ijece.v10i2.pp1764-1771