Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator
نویسندگان
چکیده
منابع مشابه
Current versus gate voltage hysteresis in organic field effect transistors
Research into organic field effect transistors (OFETs) has made significant advances—both scientifically and technologically—during the last decade, and the first products will soon enter the market. Printed electronic circuits using organic resistors, diodes and transistors may become cheap alternatives to silicon-based systems, especially in large-area applications. A key parameter for device...
متن کاملTuning the threshold voltage in electrolyte-gated organic field-effect transistors.
Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals. The influence of the work function of the metal i...
متن کاملRevealing buried interfaces to understand the origins of threshold voltage shifts in organic field-effect transistors.
متن کامل
Low-Voltage Organic Thin Film Transistors with High-K Bi1.5Zn1.0nb1.5O7 Pyrochlore Gate Insulator
Thin film transistor circuits using organic semiconductors (oTFT) have received intense interest for applications requiring structural flexibility, large area coverage, low temperature processing, and low-cost [1]. Pentacene TFTs have demonstrated the highest performance among TFTs with an organic semiconductor channel. A major limitation, however, has been unusually high operating voltages (20...
متن کاملOrganic Field-Effect Transistors with Reversible Threshold Voltage Shifts for Memory Element
We introduce an charge-accepting layer on a poly(methyl methacrylate) (PMMA) dielectric to investigate the reversible threshold voltage (Vth) shifts in all-polymer n-channel organic field-effect transistor (OFET) using an organic semiconductor of an poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (P(NDI2OD-T2)). Top contact drain-sour...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2004
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1810205