Transition from electron accumulation to depletion at InGaN surfaces

Effects of depletion on the emission from individual InGaN dots

Accumulation layer profiles at InAs polar surfaces

Electron pair production at surfaces: Response to occupied Shockley state

We have investigated the electron pair emission from a Cu(111) surface excited with a primary electron beam. We use the diffraction of electron pairs to identify the contribution of the Shockley surface state to the intensity. Exploring energy and momentum conservation laws makes it possible to select this state and to investigate the electron-electron interaction within this two-dimensional el...

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

in InGaN light emitting diodes X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania Kyma Technologies, Inc., Raleigh, North Carolina 27617, USA

Reconstructions of GaN and InGaN surfaces

The reconstruction and growth kinetics of gallium nitride (0001) and (000 ) surfaces are studied using scanning tunneling microscopy, reflection high-energy electron diffraction, and low-energy electron diffraction. Results for bare GaN surfaces are summarized, with particular attention paid to the “pseudo-1×1” reconstruction of the (0001) face. Changes in the surface structure and kinetic proc...