Transport across meso-junctions of highly doped Si with different superconductors
نویسندگان
چکیده
We studied the transport properties of meso-junctions semiconducting (Sm) highly doped Si with different superconductors (Sc) through point contact Andreev reflection (PCAR) spectroscopy. Spectra low transparency contacts between and In showed an enhancement in superconducting energy gap In. This was due to effect additional arising from Schottky barrier at Sm-Sc interface. For higher Si-Nb Si-Pb contacts, no observed though there were weak sub features. These proximity induced interface superconductivity known occur for junctions high transparency.
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ژورنال
عنوان ژورنال: Physics Letters
سال: 2021
ISSN: ['1873-2429', '0375-9601']
DOI: https://doi.org/10.1016/j.physleta.2020.127115